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      當前位置:首頁   >  產品中心  >  二維材料  >  二維材料薄膜  >  基于藍寶石襯底的三角形單層二硫化鉬

      基于藍寶石襯底的三角形單層二硫化鉬

      簡要描述:Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates.

      • 產品型號:
      • 廠商性質:生產廠家
      • 更新時間:2024-06-04
      • 訪  問  量:1230

      詳細介紹

      Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced MoS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer MoS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

       

       

       

      Sample Properties.

      Sample size

      1cm x 1cm square shaped

      Substrate type

      (0001) c-cut sapphire

      Coverage

      Isolated and Partially Merged Monolayer Triangles

      Electrical properties

      1.85 eV Direct Bandgap Semiconductor

      Crystal structure

      Hexagonal Phase

      Unit cell parameters

      a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°

      Production method

      Atmospheric Pressure Chemical Vapor Deposition (APCVD)

      Characterization methods

      Raman, photoluminescence, TEM, EDS

      Specifications

      1)     Well-separated MoS2 domains across c-cut sapphire

      2)     One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

      3)     Atomically smooth surface with roughness < 0.15 nm.

      4)     Highly uniform surface morphology. MoS2 triangles are scattered across sample

      5)     99.9995% purity as determined by nano-SIMS measurements

      6)    Repeatable Raman and photoluminescence response

      7)     High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

      8)     c-cut Sapphire but our research and development team can transfer MoS2 triangles onto variety of substrates including PET, quartz, and SiO2/Si without significant compromising of material quality.

      9)    Defect profile. MoS2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce            defected MoS2 using α-bombardment technique.

       

       

      Supporting datasets [for Monolayer MoS2 Triangles on c-cut Sapphire]

       

      Transmission electron images (TEM) acquired from CVD grown MoS2 isolated triangles on c-cut sapphire confirming highly crystalline nature of monolayers

      Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown MoS2 isolated triangles on c-cut sapphire confirming Mo:S 1:2 ratios

      Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown MoS2 isolated triangles on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

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      上海巨納科技有限公司 公司地址:上海市虹口區寶山路778號海倫國際大廈5樓   技術支持:化工儀器網
      • 聯系人:袁文軍
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