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      當前位置:首頁   >  產品中心  >  二維材料  >  碲化物晶體  >  HfTe2 二碲化鉿晶體 (Hafnium ditelluride)

      HfTe2 二碲化鉿晶體 (Hafnium ditelluride)

      簡要描述:Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity.

      • 產品型號:
      • 廠商性質:生產廠家
      • 更新時間:2024-06-04
      • 訪  問  量:1152

      詳細介紹

      Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. They have been optimized to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (6N), 99.9999%.

      Properties of HfTe2 crystals by 2Dsemiconductors USA

      Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

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      上海巨納科技有限公司 公司地址:上海市虹口區寶山路778號海倫國際大廈5樓   技術支持:化工儀器網
      • 聯系人:袁文軍
      • QQ:494474517
      • 公司座機:86-021-56830191
      • 郵箱:yuanwenjun@sunano.com.cn

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