歡迎來(lái)到上海巨納科技有限公司網(wǎng)站！歡迎來(lái)到上海巨納科技有限公司網(wǎng)站！
13761090949
當(dāng)前位置：首頁(yè) > 產(chǎn)品中心 > 二維材料 > 硒化物晶體 > SnSe 硒化錫晶體 （Tin Selenide）
簡(jiǎn)要描述：In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.
產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家更新時(shí)間：2024-06-03訪 問(wèn) 量：1226詳細(xì)介紹
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
產(chǎn)品咨詢
聯(lián)系我們
上海巨納科技有限公司 公司地址：上海市虹口區(qū)寶山路778號(hào)海倫國(guó)際大廈5樓 技術(shù)支持：化工儀器網(wǎng)掃一掃 更多精彩
微信二維碼
網(wǎng)站二維碼