咨詢熱線

      13761090949

      當(dāng)前位置:首頁   >  產(chǎn)品中心  >  二維材料  >  硒化物晶體  >  GaSe 硒化鎵晶體 (Gallium Selenide)

      GaSe 硒化鎵晶體 (Gallium Selenide)

      簡要描述:Unlike other sources, our GaSe crystals are best suited towards electronic and optical applications in 2D materials field.

      • 產(chǎn)品型號:
      • 廠商性質(zhì):生產(chǎn)廠家
      • 更新時(shí)間:2024-06-03
      • 訪  問  量:1841

      詳細(xì)介紹

      Unlike other sources, our GaSe crystals are best suited towards electronic and optical applications in 2D materials field. Our GaSe (gallium selenide) crystals have been synthesized through three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. Large grain sizes and controlled defects enable you to yield monolayers through simple exfoliation process with high yields, get high electronic mobility, and ideal exciton recombination times. By default, 2Dsemiconductors USA provides Bridgman growth GaSe crystals cut in 0001 direction ready for exfoliation. However, if your research needs CVT or flux zone grown GaSe please drop a note during check out. 
      Properties of vdW GaSe crystals - 2Dsemiconductors USA

      Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 
       
      1. Journal of Nanoelectronics and Optoelectronics Vol. 7, 1–3, 2012
      2. ACS Nano, 2012, 6 (7), pp 5988–5994

      產(chǎn)品咨詢

      留言框

      • 產(chǎn)品:

      • 您的單位:

      • 您的姓名:

      • 聯(lián)系電話:

      • 常用郵箱:

      • 省份:

      • 詳細(xì)地址:

      • 補(bǔ)充說明:

      • 驗(yàn)證碼:

        請輸入計(jì)算結(jié)果(填寫阿拉伯?dāng)?shù)字),如:三加四=7

      聯(lián)系我們

      上海巨納科技有限公司 公司地址:上海市虹口區(qū)寶山路778號海倫國際大廈5樓   技術(shù)支持:化工儀器網(wǎng)
      • 聯(lián)系人:袁文軍
      • QQ:494474517
      • 公司座機(jī):86-021-56830191
      • 郵箱:yuanwenjun@sunano.com.cn

      掃一掃 更多精彩

      微信二維碼

      網(wǎng)站二維碼

      主站蜘蛛池模板: 国产在线精品一区二区不卡| 91一区二区三区四区五区| 精品一区二区三区在线视频观看 | 国产suv精品一区二区6| 精品久久一区二区三区| 色一情一乱一伦一区二区三欧美 | 三上悠亚精品一区二区久久| 国产一区二区三区播放心情潘金莲| 久久精品黄AA片一区二区三区| 国产综合精品一区二区三区| 久久国产精品一区| 国产成人精品久久一区二区三区av| 亚洲日韩中文字幕无码一区| 日韩人妻精品无码一区二区三区 | 亚洲AV无码一区二区三区国产 | 一区二区三区美女视频| 麻豆一区二区三区蜜桃免费| 男人的天堂精品国产一区| 国产精品亚洲一区二区三区 | 国产AV午夜精品一区二区三| 国产激情一区二区三区 | 无码日韩人妻AV一区二区三区 | 亚洲视频一区二区在线观看| 无码精品一区二区三区免费视频| 国产一区二区电影在线观看| 国精产品一区一区三区| 无码人妻精品一区二区三区东京热| 高清一区二区三区日本久| 久久国产精品亚洲一区二区| 在线播放一区二区| 国精产品一区一区三区有限在线| 亚洲大尺度无码无码专线一区 | 3D动漫精品啪啪一区二区下载 | 国产激情з∠视频一区二区 | 久久免费精品一区二区| 乱码精品一区二区三区| 亚洲av无码一区二区三区天堂 | 久久国产精品一区免费下载| 国产91大片精品一区在线观看| 午夜福利无码一区二区| 日韩av片无码一区二区三区不卡 |