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      當前位置:首頁   >  產品中心  >  二維材料  >  硒化物晶體  >  TaSe2 二硒化鉭晶體 (Tantalum Diselenide)

      TaSe2 二硒化鉭晶體 (Tantalum Diselenide)

      簡要描述:Environmentally stable 2H-TaSe2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport (CVT) technique.

      • 產品型號:
      • 廠商性質:生產廠家
      • 更新時間:2024-06-03
      • 訪  問  量:1205

      詳細介紹

      Environmentally stable 2H-TaSe2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport (CVT) technique. 2H-TaSe2 is a metal with charge density waves (incommensurate CDW). It has superconducting transition at around below 1K depending on the defect concentration and number of layers. It becomes CDW metal at temperatures lower than 90K. Our TaSe2 crystals are perfectly layered, cleaved in 0001 direction, with ultra-low defect concentration. Flux zone grown 2H-TaSe2 crystals come with guaranteed CDW behavior.

      Flux zone vs. CVT growth method: Contamination and defects in TaSe2 crystals are well known to influence CDW behavior. (temperature onset, ability to observe, sheet resistance). Flux zone technique is a halide free and slow growth technique used for synthesizing truly electronic grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique provides quick (~2 weeks) growth but poor crystalline quality while flux method takes ~3 months, ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as default choice.

      Properties of 2H phase TaSe2 crystals - 2Dsemiconductors USA

      Example publication from this product

      H. Ryu et.al. "Persistent Charge-Density-Wave Order in Single-Layer TaSe2" Nano Letters, 18, 689 (2018)

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      上海巨納科技有限公司 公司地址:上海市虹口區寶山路778號海倫國際大廈5樓   技術支持:化工儀器網
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